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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of thermal stability of GaN epi-layer on the Schottky diodes
K. N. Lee,Xian-An Cao,C. R. Abernathy,Stephen J. Pearton,A. P. Zhang,Fan Ren,R. Hickman,J. M. Van Hove +7 more
TL;DR: In this paper, the effect of thermal annealing on the behavior of GaN Schottky diodes was investigated, and it was shown that only annaling at temperatures ⩾900°C significantly degraded the Schittky diode characteristics.
Journal ArticleDOI
High temperature rapid thermal annealing of InP and related materials
Stephen J. Pearton,Avishay Katz +1 more
TL;DR: In this paper, the surface characteristics associated with high temperature heating of InP and related compounds are discussed. But the authors focus on surface preservation during implant activation annealing, and not on characterizing the surface after other heating steps.
Journal ArticleDOI
Diffusion of hydrogen in n-type Si
TL;DR: In this article, the diffusion of hydrogen in n-type Si and the related passivation of donor dopants (Sb, As, P) through formation of neutral donor-hydrogen complexes were studied.
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Effect of Ozone Cleaning and Annealing on Ti ∕ Al ∕ Pt ∕ Au Ohmic Contacts on GaN Nanowires
Chih-Yang Chang,Tian-Wey Lan,Gou-Chung Chi,Li-Chyong Chen,Kuei-Hsien Chen,J.J. Chen,Soohwan Jang,Fan Ren,Stephen J. Pearton +8 more
TL;DR: In this article, the effect of UV/ozone cleaning on n-type GaN nanowires prior to Ti/Al/Pt/Au ohmic contact deposition was investigated and it was found that ozone treatment reduced the apparent resistivity from 71 to ∼ 0.7 Ω cm.
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Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures
Xian-An Cao,J. M. Van Hove,J. J. Klaassen,C. J. Polley,Andrew M. Wowchak,Peter Chow,D.J King,A. P. Zhang,G. T. Dang,C Monier,Stephen J. Pearton,Fan Ren +11 more
TL;DR: In this paper, the dc characteristics of pnp GaN/AlGaN heterojunction bipolar transistors were simulated using a quasi-3D model and the effects of base doping and thickness, contact geometry and device operating temperature on dc current gain were examined.