S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Editors' Choice—Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory
TL;DR: In this article, it has been found that hydrogen can play a key role in the conductivity of Ga2O3 by passivating deep defects and acting as a shallow donor.
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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
Casey M. Schwarz,Anupama Yadav,Max Shatkhin,Elena Flitsiyan,Leonid Chernyak,V. Kasiyan,Li Liu,Yuyin Xi,Fan Ren,Stephen J. Pearton,Chien-Fong Lo,Jerry W. Johnson,E. Danilova +12 more
TL;DR: In this paper, high electron mobility transistors were irradiated with 60Co gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties.
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Shallow donor formation in phosphorus-doped ZnO thin films
TL;DR: In this paper, the doping behavior of phosphorus in as-deposited ZnO crystalline thin films grown by pulsed-laser deposition is reported, and the experimental results indicate that phosphorus doping significantly increases the electron carrier density, making the material heavily n-type.
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Etch characteristics of HfO2 films on Si substrates
S. Norasetthekul,P.Y. Park,K.H. Baik,K. P. Lee,J.H. Shin,Byoung-Seong Jeong,V. Shishodia,David P. Norton,Stephen J. Pearton +8 more
TL;DR: The etch rates and mechanisms for HfO2 thin films in Cl2-, SF6- or CH4/H2-based plasmas were measured as a function of source power, r.f. chuck power and discharge composition as discussed by the authors.
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SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications
Shao-Tsu Hung,Chi-Jung Chang,Chien-Hsing Hsu,Byung Hwan Chu,Chien-Fong Lo,Chin-Ching Hsu,Stephen J. Pearton,M. R. Holzworth,P. G. Whiting,Nicholas G. Rudawski,Kevin S. Jones,Amir M. Dabiran,Peter Chow,Fan Ren +13 more
TL;DR: In this article, the SnO2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of a HEMT device through a photolithography process.