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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
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Spintronics device concepts
TL;DR: In this article, the authors give examples of different spin-device concepts for polarised light emission, spin field-effect transistors, and nanowire sensors, and show that the spin-relaxation time observed in GaN/InGaN heterostructures probably results from the Rashba effect.
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Degradation Mechanisms for GaN and GaAs High Speed Transistors
TL;DR: In this paper, the authors present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistor (HBTs) in the materials systems and summarize the degradation mechanisms that limit the lifetime of these devices.
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Nitrogen and fluorine ion implantation in InxGa1−xN
TL;DR: The dominant deep state introduced by implantation and annealing has ionization energies of ∼0.35-0.39 eV and therefore are relatively high in the band gap of the InGaN as discussed by the authors.
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Radiation Effects in GaN-Based High Electron Mobility Transistors
TL;DR: In this article, the authors reviewed the radiation resistance of GaN-based transistors such as AlGaN/GaN and InAlN/GAN high electron mobility transistors (HEMTs) to different types of ionizing radiation.
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The self-trapping of hydrogen in semiconductors
TL;DR: In this paper, it was shown that the BC-site is the lowest energy site for hydrogen in silicon, while a secondary minimum is at the anti-bonding site, and that these results are strongly dependent on the relaxation experienced by the silicon atoms neighboring the hydrogen.