S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
More filters
Journal ArticleDOI
Observation of sphere resonance peak in ferromagnetic GaN:Mn
Sung Seok A. Seo,M. W. Kim,Yun Sang Lee,T. W. Noh,Y. D. Park,G. T. Thaler,M. E. Overberg,C. R. Abernathy,Stephen J. Pearton +8 more
TL;DR: In this paper, temperature-dependent optical spectra of ferromagnetic Mn-doped GaN in a wide photon energy region of 5 meV −4 eV were reported.
Journal ArticleDOI
Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,T. G. Yugova,Amir M. Dabiran,Andrew M. Wowchak,Bentao Cui,Andrei Osinsky,Peter Chow,Stephen J. Pearton,K. D. Scherbatchev,V. T. Bublik +12 more
TL;DR: In this article, the electrical and structural properties of AlN/GaN heterostructures grown by molecular beam epitaxy on sapphire are compared with those of AlGaN/GAN.
Journal ArticleDOI
Advantages and limitations of MgO as a dielectric for GaN
Brent P. Gila,Jihyun Kim,B. Luo,A. H. Onstine,W. Johnson,Fan Ren,C. R. Abernathy,Stephen J. Pearton +7 more
TL;DR: In this article, MgO and Sc 2 O 3 were deposited by gas source molecular beam epitaxy on GaN and they were found to produce lower interface state densities than Sc 2O 3, 2.3 × 10 11 vs. 9 −11 −10 11 eV −1 ǫ −2.
Journal ArticleDOI
Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3
Patrick H. CareyIV,Fan Ren,David C. Hays,Brent P. Gila,Stephen J. Pearton,Soohwan Jang,Akito Kuramata +6 more
TL;DR: In this article, X-ray photoelectron spectroscopy was used to determine the valence band offset at LaAl2O3 (LAO)/β-Ga2O 3 heterointerfaces.
Journal ArticleDOI
Band alignment of atomic layer deposited SiO 2 and HfSiO 4 with (\bar{2}01) β-Ga 2 O 3
Patrick H. Carey,Fan Ren,David C. Hays,Brent P. Gila,Stephen J. Pearton,Soohwan Jang,Akito Kuramata +6 more
TL;DR: In this article, the authors measured the valence band offset at both SiO2/β-Ga2O3 and HfSiO4/ β-Ga 2O3 heterointerfaces using X-ray photoelectron spectroscopy.