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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors
K. H. Chen,H.W. Wang,B. S. Kang,Chih-Yang Chang,Yu-Lin Wang,Tanmay P. Lele,Fan Ren,Stephen J. Pearton,Amir M. Dabiran,Andrei Osinsky,Peter Chow +10 more
TL;DR: In this paper, thioglycolic acid functionalized Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect mercury(II) ions.
Journal ArticleDOI
Hydrogen-decorated lattice defects in proton implanted GaN
M.G. Weinstein,C.Y. Song,Michael Stavola,Stephen J. Pearton,Robert G. Wilson,Randy J. Shul,K. P. Killeen,M. J. Ludowise +7 more
TL;DR: In this paper, several vibrational bands were observed near 3100 cm−1 in GaN that had been implanted with hydrogen at room temperature and subsequently annealed, and these bands are due to nitrogen-dangling-bond defects created by the implantation that are decorated by hydrogen.
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Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr
Xian-An Cao,Stephen J. Pearton,G. T. Dang,A. P. Zhang,Fan Ren,Robert G. Wilson,J. M. Van Hove +6 more
TL;DR: In this article, the defect level of n-and p-type GaN with Ti+, O+, Fe+, or Cr+ was found to produce defect levels which pinned the Fermi level in these materials at EC−(0.20−0.49)
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Enzyme-based lactic acid detection using AlGaN /GaN high electron mobility transistors with ZnO nanorods grown on the gate region
Byung Hwan Chu,B. S. Kang,Fan Ren,Chih-Yang Chang,Yu-Lin Wang,Stephen J. Pearton,Alexander V. Glushakov,Donn M. Dennis,Jerry W. Johnson,Pradeep Rajagopal,John C. Roberts,Edwin L. Piner,K. J. Linthicum +12 more
TL;DR: In this article, the detection of lactic acid with ZnO nanorod-gated AlGaN∕GaN high electron mobility transistors (HEMTs) was demonstrated.
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REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO
TL;DR: In this article, the properties of transition metal-doped ZnO thin films for the two most studied transition metal dopants, namely Mn and Co, are also discussed in this review.