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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs
J. W. Lee,K. D. Mackenzie,D. Johnson,Randy J. Shul,Stephen J. Pearton,C. R. Abernathy,Fan Ren +6 more
TL;DR: In this paper, GaAs/AlGaAs heterojunction bipolar transistors were coated with thin SiNX or SiO2 layers using electron cyclotron resonance chemical vapor deposition.
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High-pressure process to produce GaN crystals
Donald R. Gilbert,Alexander Novikov,Nikolay Patrin,John S. Budai,Frank Kelly,Robert Chodelka,Reza Abbaschian,Stephen J. Pearton,Rajiv K. Singh +8 more
TL;DR: In this article, an ultrahigh pressure, high temperature process was developed using a solid-phase nitrogen source to form GaN crystals in a Ga metal melt using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region.
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Hydrogen in Crystalline Semiconductors: Part I—SILICON
TL;DR: In this paper, the ability of hydrogen to form neutral complexes with dopants and impurities is discussed, and the role of hydrogen during chemical vapor deposition and molecular beam epitaxy of Si.
Journal Article
GaN Metal Oxide Semiconductor Field Effect Transistors
Fan Ren,Stephen J. Pearton,C. R. Abernathy,Albert G. Baca,P. Cheng,Randy J. Shul,S. N. G. Chu,Minghwei Hong,James Robert Lothian,M. J. Schurman +9 more
TL;DR: In this paper, a GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 1}O {sub 3}) as the gate dielectric.
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Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer
TL;DR: In this paper, high-quality ZnO film growth on sapphire was achieved by pulsed laser deposition using a high temperature deposited buffer layer, which remarkably improved the crystallinity of subsequent films.