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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition
TL;DR: The transport properties of as-deposited and rapid thermal annealed phosphorus-doped ZnO films grown by pulsed laser deposition are reported in this paper, with evidence for P segregation in the higher phosphorus concentrations.
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Effect of growth conditions on the magnetic characteristics of GaGdN
Jennifer K. Hite,R. M. Frazier,Ryan Davies,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,J. M. Zavada +6 more
TL;DR: In this article, GaGdN layers were grown by gas source molecular beam epitaxy with varying crystal quality and Gd concentrations as set by the Gd cell temperature, and x-ray diffraction measurements showed the films to be single phase.
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High rate electron cyclotron resonance etching of GaN, InN, and AlN
Randy J. Shul,A. J. Howard,Stephen J. Pearton,C. R. Abernathy,Catherine Vartuli,P. A. Barnes,M. J. Bozack +6 more
TL;DR: In this paper, the etch rates of GaN, InN, and AlN were reported as a function of pressure, microwave power, and radio frequency (RF) power in a Cl2/H2/CH4/Ar plasma at 170°C.
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Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure
TL;DR: In this article, the authors evaluated the influence of the thermally modified, near-surface crystalline quality on sputtered WSi contact to GaN and demonstrated a strong relationship between the improved GaN crystal quality and postgrowth high-temperature thermal processing.
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Low specific contact resistance Ti∕Au contacts on ZnO
J. J. Chen,Soohwan Jang,Timothy J. Anderson,Fan Ren,Yuanjie Li,Hyun-Sik Kim,Brent P. Gila,David P. Norton,Stephen J. Pearton +8 more
TL;DR: In this paper, the contact morphology roughens after annealing at 150°C and Auger electron spectroscopy depth profiling shows Zn outdiffusion through the metal and intermixing of Au and Ti.