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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
On the origin of spin loss in GaMnN/InGaN light-emitting diodes
Irina Buyanova,Morteza Izadifard,Weimin Chen,Jihyun Kim,Fan Ren,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,Chang Chi Pan,G.-T. Chen,J. Y. Chyi,John Zavada +11 more
TL;DR: In this article, the spin loss in the structures is shown to be largely due to fast spin relaxation within the InGaN spin detector, which itself destroys any spin polarization generated by optical spin orientation or electrical spin injection.
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Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
Patrick H. Carey,Jiancheng Yang,Fan Ren,David C. Hays,Stephen J. Pearton,Akito Kuramata,Ivan I. Kravchenko +6 more
TL;DR: In this article, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500-600°C.
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Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)
TL;DR: In this article, the authors investigated the use of phenylarsine (PhAsH 2 ) and trisdimethylaminoarsenic (DMAAs) as potential replacements for AsH 3 during growth by chemical beam epitaxy (CBE).
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Defects in N, O and N, Zn implanted ZnO bulk crystals
Jan Eric Stehr,Xingjun Wang,Stanislav Filippov,Stephen J. Pearton,Ivan Gueorguiev Ivanov,Weimin Chen,Irina Buyanova +6 more
TL;DR: In this paper, a comprehensive characterization of defects formed in bulk ZnO single crystals co-implanted with N and Zn as well as N and O atoms is performed by means of optically detected magnetic resonance (ODMR) complemented by Raman and photoluminescence (PL) spectroscopies.
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Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
Li Liu,Tsung Sheng Kang,David A. Cullen,Lin Zhou,Jinhyung Kim,Chih-Yang Chang,Erica A. Douglas,Soohwan Jang,David J. Smith,Stephen J. Pearton,Wayne Johnson,Fan Ren +11 more
TL;DR: In this article, the effects of source field plates on AlGaN/GaN high electron mobility transistor reliability under off-state stress conditions were investigated using step-stress cycling, and the presence of pits that appeared on both source and drain sides of the gate edges was attributed to the inverse piezoelectric effect.