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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays
Jiancheng Yang,Minghan Xian,Patrick H. Carey,Chaker Fares,Jessica Partain,Fan Ren,Marko J. Tadjer,Elaf A. Anber,Daniel L. Foley,Andrew C. Lang,James L. Hart,James E. Nathaniel,Mitra L. Taheri,Stephen J. Pearton,Akito Kuramata +14 more
TL;DR: In this article, the performance of arrays consisting of 21 β-Ga2O3 field-plated rectifiers fabricated on thick epitaxial layers (n-type carrier concentration ∼1.6
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Detection of halide ions with AlGaN∕GaN high electron mobility transistors
B. S. Kang,Fan Ren,M. C. Kang,Charles Lofton,Weihong Tan,Stephen J. Pearton,Amir M. Dabiran,Andrei Osinsky,Peter Chow +8 more
TL;DR: In this article, anion adsorbed on the Au-gate electrode not only doubled the sensitivity of changing the channel conductance as compared to gateless HEMTs, but also showed the opposite conductance behavior.
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Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions
TL;DR: A novel pnp double heterojunction fabricated by the vertical stacking of 2DMs using dry-transfer techniques and the formation of high-quality p-n heterojunctions between the BP and MoS2 in the vertically stacked BP/MoS2/BP structure is demonstrated.
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Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
B. Luo,R. Mehandru,Jihyun Kim,Fan Ren,Brent P. Gila,A. H. Onstine,C. R. Abernathy,Stephen J. Pearton,Robert C. Fitch,James K. Gillespie,T. Jenkins,James S. Sewell,D. Via,Antonio Crespo,Y. Irokawa +14 more
TL;DR: In this paper, three passivation layers (SiN x, MgO, and Sc 2 O 3 ) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs).
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Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs
TL;DR: In this article, the removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn, and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry, and Rutherford backscattering.