S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Carbon in GaAs: implantation and isolation characteristics
TL;DR: Carbon was implanted into GaAs at doses between 1013 and 5×1014 cm−2, either by itself or with Ga coimplantation at room temperature or 200 °C.
Book
InP HBTs Growth, Processing, and Applications
Bahram Jalali,Stephen J. Pearton +1 more
TL;DR: InP-based Heterojunction bipolar transistors (HBTs) have been investigated in this article, where the effect of reducing xb on electron transport has been investigated.
Journal ArticleDOI
Schottky rectifiers fabricated on free-standing GaN substrates
Jerry W. Johnson,J.R. LaRoch,Fan Ren,Brent P. Gila,M. E. Overberg,C. R. Abernathy,J.-I. Chyi,C.-C. Chuo,Tzer-En Nee,Chien-Chieh Lee,K. P. Lee,Sang-Yong Park,Yong Jo Park,Stephen J. Pearton +13 more
TL;DR: In this paper, a GaN Schottky rectifier was fabricated on free-standing substrates and on epi/substrate structures and the forward turn-on voltages were as low as 3 V at 25°C.
Journal ArticleDOI
Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition
Stephen J. Pearton,C. R. Abernathy,R. Caruso,S. M. Vernon,K. T. Short,J. M. Brown,S. N. G. Chu,Michael Stavola,V. E. Haven +8 more
TL;DR: In this article, the structural and electrical properties of GaAs grown on Si or Si-on-insulator (SOI) by metalorganic chemical vapor deposition are investigated and a substantial improvement in the surface morphology and near surface crystallinity of the GaAs in thicker films (≥1.5 μm).
Journal Article
Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors
Gabby Sarusi,Barry F. Levine,Stephen J. Pearton,K. M. S. V. Bandara,Ronald E. Leibenguth,J. Y. Andersson +5 more
TL;DR: In this article, a detailed study of two-dimensional grating coupling for quantum well infrared photodetectors in the very long wavelength spectral region λ∼16-17 μm was performed.