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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape
Wantae Lim,Erica A. Douglas,Suhyun Kim,David P. Norton,Stephen J. Pearton,Fan Ren,Hongen Shen,W. H. Chang +7 more
TL;DR: Amorphous InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide cleanroom tape at low temperature (<100°C).
Journal ArticleDOI
Thermal stability of ti/pt/au nonalloyed ohmic contacts on inn
TL;DR: In this paper, a low contact resistivity of 1.8×10−7 Ω cm2 was measured at room temperature using the transmission line method, where the contacts were annealed at different temperatures up to 420°C to investigate their thermal stability.
Journal ArticleDOI
Effect of dry etching on surface properties of III-nitrides
Fan Ren,J. R. Lothian,Stephen J. Pearton,C. R. Abernahty,Catherine Vartuli,J. D. MacKenzie,Robert G. Wilson,Robert F. Karlicek +7 more
TL;DR: In this article, the conductivity of the immediate InAlN or GaN surface can be increased by preferential loss of N during BCl3 plasma etching, leading to poor rectifying contact characteristics when the gate metal is deposited on this etched surface.
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Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
Byung Hwan Chu,B. S. Kang,Sheng Chun Hung,K. H. Chen,Fan Ren,Andrew Sciullo,Brent P. Gila,Stephen J. Pearton +7 more
TL;DR: There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC and these electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology.
Journal ArticleDOI
Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN
TL;DR: The role of defects in producing large saturation magnetization in Gd-doped GaN was investigated in this article, where the implanted GaN exhibited no secondary phase formation or clustering effects attributable to Gd.