S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates
Alexander Y. Polyakov,N. B. Smirnov,Andrei V. Turutin,I. S. Shemerov,Fan Ren,Stephen J. Pearton,J. Wayne Johnson +6 more
TL;DR: In this article, deep traps were studied in multiple-finger AlGaN/GaN transistors with broad periphery by means of currentvoltage and capacitance-voltage characteristics, reverse deep level transient spectroscopy, DLS with electrical (DLTS) and optical DLTS injection, and current DLTS with gate voltage and drain voltage pulsing.
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Dry etch patterning of LaCaMnO3 and SmCo thin films
J. J. Wang,Jeffrey R. Childress,Stephen J. Pearton,F. Sharifi,Klaus Hermann Dahmen,E. S. Gillman,F. J. Cadieu,R. Rani,X. R. Qian,Li Chen +9 more
TL;DR: A number of different plasma chemistries have been employed for patterning of LaCaMnO 3 and SmCo thin films for application in magnetic-field-biased structures based on the colossal magnetoresistive effect as mentioned in this paper.
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Redistribution of implanted dopants in GaN
Xian-An Cao,Robert G. Wilson,J. C. Zolper,Stephen J. Pearton,J. Han,Randy J. Shul,D. J. Rieger,Rajiv K. Singh,M. Fu,V. Scarvepalli,Jainagesh A. Sekhar,J. M. Zavada +11 more
TL;DR: In this article, the dopants were implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C.
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GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates
Fan Ren,N. Chand,P.A. Garbinski,Stephen J. Pearton,C.S. Wu,L.D. Urbanek,T. R. Fullowan,N.J. Shah,Mark D. Feuer +8 more
TL;DR: Using a very thin layer of GaAs (2.1 μm) on Si, this paper fabricated GaAs MESFETs, 19 stage ring oscillators, and divide-by-2 frequency dividers with good yield.
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Optical and electron beam studies of carrier transport in quasibulk GaN
Yuqing Lin,E. Flitsyian,Leonid Chernyak,Tadas Malinauskas,R. Aleksiejunas,Kestutis Jarasiunas,W. Lim,Stephen J. Pearton,Konstantin Gartsman +8 more
TL;DR: In this article, a light-induced transient grating technique combined with electron beam-induced current measurements in situ in a scanning electron microscope were employed for carrier transport studies in quasibulk hydride-vapor phase epitaxy grown undoped GaN layers.