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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Optical characterization of ZnMnO-based dilute magnetic semiconductor structures
Irina Buyanova,Weimin Chen,M. Ivill,R. Pate,David P. Norton,Stephen J. Pearton,J. W. Dong,Andrei Osinsky,B. Hertog,Amir M. Dabiran,Peter Chow +10 more
TL;DR: In this paper, the authors showed that wide-band gap dilute magnetic semiconductors with weak spin-orbit interaction and hexagonal symmetry are not attractive for spin-LED applications.
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Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth
Alexander Y. Polyakov,A. V. Govorkov,N. B. Smirnov,A. V. Markov,In Hwan Lee,Jin Woo Ju,Stephen J. Pearton +6 more
TL;DR: In this article, microcathodoluminescence spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG).
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A study of deep metal-related centres in germanium by capacitance spectroscopy
TL;DR: In this article, deep energy states associated with Se, Te, Cd, Mg, Ti, Cr, Mn, Fe, Zr and Co diffused for 8-10 hr at ∼ 750°C into n - and p -type Ge (| N A − N D | = 4 × 10 12 − 6 × 10 13 cm −3 ).
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In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure Under Forward Biasing Condition
Zahabul Islam,Minghan Xian,Aman Haque,Fan Ren,Marko J. Tadjer,Nicholas R. Glavin,Stephen J. Pearton +6 more
TL;DR: In this article, defect nucleation leading to device degradation in Ga2O3 Schottky barrier diodes by operating them inside a transmission electron microscope is investigated, which allows simultaneous visualization and quantitative device characterization, not possible with the current art of postmortem microscopy.
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Hydrogenation effects during high-density plasma processing of GaAs MESFETS
Fan Ren,J. W. Lee,C. R. Abernathy,Stephen J. Pearton,Randy J. Shul,C. Constantine,C. Barratt +6 more
TL;DR: In this paper, inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasmas create severe reductions in MESFET mutual transconductance and reverse breakdown voltage through reductions in channel layer doping and surface stoichiometry changes.