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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
High-Density Plasma-Induced Etch Damage of GaN
Albert G. Baca,Jung Han,Luke F. Lester,Stephen J. Pearton,Fan Ren,Randy J. Shul,C. G. Willison,L. Zhang,J. C. Zolper +8 more
TL;DR: In this article, changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP) were reported, and the p-GaN was typically more sensitive to ion bombardment energies as compared to plasma flux.
Journal ArticleDOI
Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy
In Hwan Lee,Alexander Y. Polyakov,Eugene B. Yakimov,Eugene B. Yakimov,N. B. Smirnov,Ivan Shchemerov,S. A. Tarelkin,S. I. Didenko,K. I. Tapero,R. A. Zinovyev,Stephen J. Pearton +10 more
TL;DR: In this article, the effects of room temperature 6'MeV electron irradiation on the donor concentration, deep trap spectra, and diffusion lengths of nonequilibrium charge carriers were studied for undoped n-GaN grown by hydride vapor phase epitaxy.
Journal ArticleDOI
Transition metal ion implantation into AlGaN
R. M. Frazier,G. T. Thaler,C. R. Abernathy,Stephen J. Pearton,Mim Lal Nakarmi,K. B. Nam,Jingyu Lin,Hongxing Jiang,J. Kelly,R. Rairigh,Arthur F. Hebard,J. M. Zavada,Robert G. Wilson +12 more
TL;DR: In this article, annealing and implantation of n-and p-type AlGaN with the transition metals Mn, Cr, and Co at high concentrations (peak doping levels ∼3 at.
Journal ArticleDOI
Mechanism for radiative recombination in ZnCdO alloys
Irina Buyanova,J. P. Bergman,Galia Pozina,Weimin Chen,S. Rawal,David P. Norton,Stephen J. Pearton,Andrei Osinsky,J. W. Dong +8 more
TL;DR: In this article, the origin of radiative recombination in ZnCdO alloys grown by molecular-beam epitaxy was investigated and it was shown that energy transfer between the tail states is facilitated by tunneling of localized excitons.
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Simulation of Radiation Effects in AlGaN/GaN HEMTs
TL;DR: In this article, a partially ionized impurity scattering mobility model was proposed to explain the observed reduction in mobility of high electron mobility transistors (HEMTs) in space applications.