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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,T. G. Yugova,E. A. Petrova,Amir M. Dabiran,Andrew M. Wowchak,Andrei Osinsky,Peter Chow,Stephen J. Pearton,K. D. Shcherbatchev,V. T. Bublik +12 more
TL;DR: In this article, semi-insulating GaN(Fe) films grown by molecular beam epitaxy (MBE) were characterized by measuring electrical properties, deep-level spectra, Fe distribution profiles, microcathodoluminescence (MCL), electron-beam-induced current, and MCL imaging.
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Electrical effects of atomic hydrogen incorporation in GaAs-on-Si
J. M. Zavada,Stephen J. Pearton,Robert G. Wilson,C. S. Wu,Michael Stavola,Fan Ren,John Lopata,William Cross Dautremont-Smith,Steven W. Novak +8 more
TL;DR: In this article, the authors introduced atomic hydrogen by exposure to a hydrogen plasma or by proton implantation into GaAs layers epitaxially grown on Si substrates, and showed that the hydrogen migrates out of the GaAs to both the surface and heterointerface, where it shows no further motion even at 700 °C.
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Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
Jerry W. Johnson,Jung Han,Albert G. Baca,R. D. Briggs,Randy J. Shul,Joel R. Wendt,C. Monier,Fan Ren,B. Luo,S.N.G Chu,D. Tsvetkov,Vladimir Dmitriev,Stephen J. Pearton +12 more
TL;DR: In this article, the defect density in the structures grown on the AlN/SiC template is significantly lower than those grown on sapphire, as measured by transmission electron microscopy.
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Effects of hydrogen on the optical properties of ZnCdO∕ZnO quantum wells grown by molecular beam epitaxy
Irina Buyanova,Xingjun Wang,Galia Pozina,Weimin Chen,W.T. Lim,David P. Norton,Stephen J. Pearton,Andrei Osinsky,J. W. Dong,B. Hertog +9 more
TL;DR: In this paper, the effects of deuterium doping on optical properties of ZnCdO∕ZnO quantum well structures grown by molecular beam epitaxy were investigated.
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Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing
Stephen J. Pearton,R. Caruso +1 more
TL;DR: In this paper, annealing of GaAs within an enclosed, SiC-coated graphite susceptor is shown to eliminate slip formation during implant activation treatments (900°C, 10 s) and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method.