S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
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Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors
TL;DR: In this article, the effects of proton irradiation doses on dc characteristics of reference, electrically stressed under off-state conditions and stressed/annealed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated.
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Electrical Performance of GaN Schottky Rectifiers on Si Substrates
TL;DR: Schottky rectifiers fabricated on GaN layers grown on 4 in. diam Si substrates show breakdown voltages (V R ) of ∼ 300 V at room temperature, on-state resistances (R ON ) of 40 mΩ cm 2, and figure-of-merit (V B ) 2 /R ON of 2.25 MW/cm 2 as discussed by the authors.
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Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs
J. W. Lee,M.H. Jeon,M. W. Devre,K. D. Mackenzie,D. Johnson,J. N. Sasserath,Stephen J. Pearton,Fan Ren,Randy J. Shul +8 more
TL;DR: In this paper, the etch mechanism and etch depth distribution on GaAs wafers in inductively coupled plasma etching were investigated and the effect of two plasma chemistries for GaAs etching was also investigated.
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Effect of carbon doping on GaN:Er
M. E. Overberg,Cammy R. Abernathy,J. Devin MacKenzie,Stephen J. Pearton,Robert G. Wilson,John Zavada +5 more
TL;DR: The effect of carbon doping on the photoluminescence and morphology of GaN:Er has been investigated in this article, where the optimum room temperature 1.54 μm PL intensity was obtained for a carbon concentration of ∼7.7 × 10 20 cm −3.