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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition
TL;DR: In this article, high-pressure pulsed laser deposition (PLD) was used to grow one-dimensional SnO2 nanorods with a rutile structure using field emission scanning electron microscopy (FESEM) and HRTEM.
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Rapid isothermal processing of Pt/Ti contacts to p-type III-V binary and related ternary materials
Avishay Katz,S. N. G. Chu,B. E. Weir,Cammy R. Abernathy,William S. Hobson,Stephen J. Pearton,W. Savin +6 more
TL;DR: In this article, an extensive study of the interfacial intermixing and interaction of the Pt/Ti bilayer metallization to seven III-V binary and related ternary compound semiconductor systems, as well as the contact electrical properties, are given.
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Deep electron and hole traps in neutron transmutation doped n-GaN
In Hwan Lee,A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,N. G. Kolin,V. M. Boiko,A. V. Korulin,Stephen J. Pearton +8 more
TL;DR: In this article, the electrical properties of doped n-GaN were investigated and electron traps at 0.45 or 0.2 eV were found to be dominant not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps with different radiation defects.
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Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Andrei Osinsky,P. E. Norris,Stephen J. Pearton,J. M. Van Hove,Andrew M. Wowchak,Peter Chow +8 more
TL;DR: In this article, the authors compared the electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices with p-GaN films.
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Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries
Catherine Vartuli,Stephen J. Pearton,J. W. Lee,J. D. MacKenzie,C. R. Abernathy,Randy J. Shul,C. Constantine,C. Barratt +7 more
TL;DR: In this article, inductively coupled plasma (ICP) etching of GaN, AlN, InN, N, InGaN, and InAlN was investigated in CH{sub 4/H{sub 2}/Ar and Ch{sub 3/N{sub 1/N} plasmas as a function of dc bias and ICP power.