Stephen J. Pearton

TL;DR: In this article, the prevalence of hydrogen in the growth and processing ambients for wide bandgap semiconductors and the effect of this hydrogen on the performance of wide band gap semiconductor is discussed.

TL;DR: In this article, the properties of Ti/Al/Ni/Au Ohmic contacts on n-type a-plane GaN epitaxial layers directly grown on r-plane sapphire substrates are reported.

TL;DR: The specific contact resistivity and chemical intermixing of indium-tinoxide (ITO)∕Ti∕Au Ohmic contacts on n-type bulk ZnO substrates are reported as a function of annealing temperature up to 450°C.

TL;DR: In this paper, AlGaN/GaN based high electron mobility transistors (HEMTs) with improved heat dissipation are described, where a substrate has a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on nucleation, a buffer layer on transition layer, a barrier layer on buffer layer, and a metal layer filling a via hole that extends from the bottom surface of a substrate to a bottom surfaces of the transition layer.

TL;DR: In this paper, laser drilling for through-via holes was performed with a Nd:YVO4 laser for an AlGaN∕GaN high electron mobility transistor (HEMT) structure on a SiC substrate.