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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Hydrogenation of GaAs on Si: Effects on diode reverse leakage current
Stephen J. Pearton,C. S. Wu,Michael Stavola,Fan Ren,John Lopata,William Cross Dautremont-Smith,S. M. Vernon,V. E. Haven +7 more
TL;DR: In this article, the reverse breakdown voltage of Schottky diode structures was increased from 2.5 to 6.5 V. This improvement appears to be a result of the passivation by atomic hydrogen of defects such as threading dislocations caused by the large (4%) lattice mismatch between GaAs and Si.
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Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
Chien-Fong Lo,T. S. Kang,Li Liu,Chih-Yang Chang,Stephen J. Pearton,Ivan I. Kravchenko,Oleg Laboutin,Jerry W. Johnson,Fan Ren +8 more
TL;DR: In this paper, the effect of implanted gap distance (1.7, 5, or 10μm) between two Ohmic contact pads was evaluated and the isolation current density was determined to be solely dependent on the applied field between the contact pads.
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Comparison of plasma etch techniques for III–V nitrides
Randy J. Shul,G. A. Vawter,C. G. Willison,M. M. Bridges,J. W. Lee,Stephen J. Pearton,C. R. Abernathy +6 more
TL;DR: In this paper, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems.
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Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN
G. T. Thaler,R. M. Frazier,Brent P. Gila,J. Stapleton,Mark Davidson,C. R. Abernathy,Stephen J. Pearton,Carlos Segre +7 more
TL;DR: The room temperature magnetization of GaMnN films grown by molecular beam epitaxy on (0001) sapphire substrates with Mn concentrations varying from 0 to 9 at.
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Effects of defects and doping on wide band gap ferromagnetic semiconductors
Stephen J. Pearton,C. R. Abernathy,G. T. Thaler,R. M. Frazier,Fan Ren,Arthur F. Hebard,Y. D. Park,David P. Norton,W. Tang,Michael Stavola,J. M. Zavada,Robert G. Wilson +11 more
TL;DR: In this article, the authors review progress in wide band gap ferromagnetic semiconductors and the role of defects and doping on the resulting magnetic properties and show that defects can significantly degrade the magnetic properties.