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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
High Ion Density Plasma Etching of InGaP, AlInP, and AlGaP in CH 4 / H 2 / Ar
J. W. Lee,Stephen J. Pearton,C. J. Santana,Jeffrey Mileham,Eric Lambers,C. R. Abernathy,Fan Ren,William Scott Hobson +7 more
TL;DR: The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light emitting diodes, field effect transistors, and heterojunction bipolar transistors as discussed by the authors.
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Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers
TL;DR: In this article, a finite difference numerical method was used for simulation of gas flow distribution in the reactor for dry etching of large area GaAs wafers and the experimental results in BCl3/N2/SF6/He ICP plasmas confirmed that the simulated data fitted very well with real data.
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Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN
TL;DR: In this paper, the authors used a novel Ti/Al/ZrB 2 /Ti/Au metallization scheme using contact resistance, scanning electron microscopy and Auger electron spectroscopy (AES) measurements.
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Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,Jihyun Kim,Fan Ren,G. T. Thaler,M. E. Overberg,R. M. Frazier,C. R. Abernathy,Stephen J. Pearton,Chien-Chieh Lee,J.-I. Chyi,Robert G. Wilson,John Zavada +13 more
TL;DR: In this article, the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs was studied.
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DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates
Y. Irokawa,B. Luo,Fan Ren,Chang Chi Pan,G.-T. Chen,J.-I. Chyi,Soon-oh Park,Park Yushin,Stephen J. Pearton +8 more
TL;DR: In this article, AlGaN/GaN heterostructure field effect transistors (HFETs) were grown by metallorganic chemical vapor deposition on either sapphire or freestanding GaN substrates.