Stephen J. Pearton

TL;DR: In this paper, a universal etchant for III-V semiconductors was proposed and shown to give rise to highly anisotropic features with smooth surface morphologies at low dc Self bias (SBS) and low pressure (1 mTorr).

TL;DR: In this article, a number of different plasma chemistries, including NF3/O2, SF6/O 2 and SF6-O 2, were investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool.

TL;DR: In this article, the authors investigated three different materials for passivation layers, namely thin (7.5 nm) Al2O3 and HfO2 deposited with an atomic layer deposition system and conventional, thick (200 õnm) plasma enhanced chemically vapor deposited SiNX, and found the latter was the most effective in reducing drain current loss during gate lag measurements in both single and double pulse mode, but also reduced fT and fMAX through additional parasitic capacitance.

TL;DR: Deuterium incorporation depths of ∼0.13-0.65 µm were obtained in bulk, single-crystal Ga2O3 during exposure to 2H plasmas for 0.5 h at 100-270 µm as discussed by the authors.