Stephen J. Pearton

TL;DR: In this paper, it was shown that higher diffusion temperature of 500°C and longer times (50 h) are necessary to incorporate hydrogen to appreciable depth in GaN samples with different Fermi level positions.

TL;DR: AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative temperature dependence of the critical voltage for irreversible device degradation to occur during bias-stressing, indicating a breakdown in the oxide interfacial layer due to high reverse gate bias.

TL;DR: In this paper, it was shown that very different damage structures are produced in the two materials when AlAs/GaAs layer samples are subjected to Ar+ ion bombardment at liquid-nitrogen temperature.

TL;DR: In this article, the redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter contact, emitter, and collector/subcollector layers, and as a function of the Zn doping concentration and Si counterdoping level in the p+ base.

TL;DR: In this paper, dry etch rates of InxGaAlN and InxAl1−xN alloys were found to increase with In mole fraction in CH4/H2 microwave discharges, and to decrease under the same conditions in Cl2/H 2 mixtures, indicating that either atomic hydrogen or fluorine is capable of effective removal of N from the III-V nitride materials.