S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors
Shihyun Ahn,Yi Hsuan Lin,Fan Ren,Sooyeoun Oh,Younghun Jung,Gwangseok Yang,Jihyun Kim,Michael A. Mastro,Jennifer K. Hite,Charles R. Eddy,Stephen J. Pearton +10 more
TL;DR: In this paper, a planar thin film β-Ga2O3 photodetectors were irradiated with 5'MeV protons at doses from 1013 to 1015'cm−2, and the resulting effects on photocurrent, responsivity, quantum efficiency, and photo-to-dark current ratio at 254'nm wavelength were measured at both 25 and 150'°C.
Journal ArticleDOI
Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides
Catherine Vartuli,J. D. MacKenzie,J. W. Lee,C. R. Abernathy,Stephen J. Pearton,Randy J. Shul +5 more
TL;DR: In this article, the ion density under ECR conditions was measured by microwave interferometry, compared to ∼2×109 cm−3 for RIE conditions, and optical emission intensities were at least an order of magnitude higher in the ECR discharges.
Journal ArticleDOI
Comparison of dry etch chemistries for SiC
G. McDaniel,J. W. Lee,Eric Lambers,Stephen J. Pearton,Paul H. Holloway,Fan Ren,J. M. Grow,M. Bhaskaran,Robert G. Wilson +8 more
TL;DR: In this paper, the ion-induced damage is evident from Hall measurements for SiC exposed to rf powers >150 W (dc bias >−170 V) under electron cyclotron resonance (ECR) NF3 or Cl2/Ar discharges with low additional rf chuck powers (100-150 W); dc bias of −120 to −170 V.
Journal ArticleDOI
Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
Jonathan Lee,Elena Flitsiyan,Leonid Chernyak,Jiancheng Yang,Fan Ren,Stephen J. Pearton,Boris Meyler,Y. Joseph Salzman +7 more
TL;DR: The influence of 1.5 µm electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 µm as mentioned in this paper.
Journal ArticleDOI
Pt-coated InN nanorods for selective detection of hydrogen at room temperature
Olga Kryliouk,H. J. Park,Hung-Ta Wang,B. S. Kang,Timothy J. Anderson,Fan Ren,Stephen J. Pearton +6 more
TL;DR: In this paper, single crystal InN nanorods were successfully grown on c−Al2O3 by hydride-metalorganic vapor phase epitaxy, and a relatively low power consumption of ∼ 0.3mW was measured under these conditions.