S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
High density plasma etching of NiFe, NiFeCo and NiMnSb-based multilayers for magnetic storage elements
K. B. Jung,J. Hong,Hyun Cho,J. A. Caballero,J.R. Childress,Stephen J. Pearton,M. Jenson,A. T. Hurst +7 more
TL;DR: In this article, an inductively coupled plasma (ICP) source operating with ion densities several orders of magnitude higher than RIE provides etch rates of 700 A min −1 for NiFe and NiFeCo in Cl 2 /Ar discharges, and >10,000 A min−1 for NIMnSb in SF 6 /Ar.
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Surface recombination velocities on processed InGaP p‐n junctions
Stephen J. Pearton,Fan Ren,William Scott Hobson,C. R. Abernathy,R. L. Masaitis,U. K. Chakrabarti +5 more
TL;DR: In this paper, the surface recombination velocities (Sv) measured from the size dependence of the current density-voltage characteristics of the InGaP p-n junction mesa diodes were fabricated by wet or dry etching.
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GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane
William Scott Hobson,Fan Ren,M. Lamont Schnoes,S. K. Sputz,Timothy D. Harris,Stephen J. Pearton,C. R. Abernathy,Kevin S. Jones +7 more
TL;DR: In this paper, high-quality GaAs/AlGaAs quantum well and modulation-doped heterostructures have been grown by low-pressure organometallic vapor phase epitaxy (OMVPE) using trimethylamine alane (TMAA) as a new aluminum source.
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Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes
Rohit Khanna,Kelly P. Ip,K. K. Allums,K.H. Baik,C. R. Abernathy,Stephen J. Pearton,Young-Woo Heo,David P. Norton,Fan Ren,R. Dwivedi,T. N. Fogarty,Richard Wilkins +11 more
TL;DR: In this article, the reverse breakdown voltage of the ZnO Schottky rectifiers with Pt rectifying contacts was exposed to 40 MeV protons at fluences from 5 x 109 to 5 x 10 10 cm -2, which correspond to that received in more than 10 or 100 years, respectively, in low earth satellite orbit.
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Performance of GaAs MESFET's on InP substrates
TL;DR: In this paper, the fabrication of GaAs MESFETs with 0.9- mu m gate length on InP substrates, after growth of the heteroepitaxial material by metalorganic chemical vapor deposition (MOCVD) is described.