S
Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Journal ArticleDOI
Formation of thermally stable high-resistivity AlGaAs by oxygen implantation
TL;DR: In this paper, temperature-dependent Hall measurements show that the resistivity of this compensated AlGaAs has a thermal activation energy of 0.49 eV, in contrast to a value of 1.79 eV for compensation caused by ion-induced damage.
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Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels
Li-Chia Tien,Hung-Ta Wang,B. S. Kang,Fan Ren,P.W. Sadik,David P. Norton,Stephen J. Pearton,Jenshan Lin +7 more
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Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications
J. W. Dong,Andrei Osinsky,B. Hertog,Amir M. Dabiran,Peter Chow,Young-Woo Heo,David P. Norton,Stephen J. Pearton +7 more
TL;DR: In this paper, an ultraviolet (UV) light-emitting diode (LED) based on a p-n junction MgZnO/ZnOs/AlGaN/GaN semiconductor triple-heterostructure (THS) was reported.
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Hydrogen motion in defect complexes: Reorientation kinetics of the B-H complex in silicon.
TL;DR: On detecte l'alignement des complexes en comparant les forces d'absorption optique de la vibration d'etirement de H pour une lumiere polarisee parallele et perpendiculaire a l'axe de tension.
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Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit
TL;DR: In this paper, a field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-drained (3.6 x 1018 cm- 3) substrates, exhibited forward current density of 100A.