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Stephen J. Pearton
Researcher at University of Florida
Publications - 1988
Citations - 62995
Stephen J. Pearton is an academic researcher from University of Florida. The author has contributed to research in topics: Dry etching & Etching (microfabrication). The author has an hindex of 104, co-authored 1913 publications receiving 58669 citations. Previous affiliations of Stephen J. Pearton include Kyungpook National University & University of Southern California.
Papers
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Implantation characteristics of InSb
TL;DR: In this paper, the effects of implantation of Be and Si into InSb and removal by rapid thermal annealing in the range 300-400°C for 20 s was investigated by Rutherford backscattering and transmission electron microscopy.
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Proton irradiation effects on AlN/GaN high electron mobility transistors
Chien-Fong Lo,Chih-Yang Chang,Byung Hwan Chu,Hong Yeol Kim,Jihyun Kim,David A. Cullen,Lin Zhou,David J. Smith,Stephen J. Pearton,Amir M. Dabiran,Bentao Cui,Peter Chow,Soohwan Jang,Fan Ren +13 more
TL;DR: In this paper, high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2× 1015 protons/cm2, and changes from 10% to 35% of the saturation drain current and source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal.
Gateless AlGaN/GaN HEMT response to block Co-polymers
TL;DR: In this article, gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions.
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Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
Alexander Y. Polyakov,V. I. Nikolaev,Eugene B. Yakimov,Fan Ren,Stephen J. Pearton,Jihyun Kim +5 more
TL;DR: In this paper , a review of reported trap states in the bandgaps of different polymorphs of the emerging ultrawide bandgap semiconductor Ga2O3 is given, where the trap states span the entire bandgap range in the three stable (β) or meta-stable polymorphs (α and ǫ) and are assigned either to impurities such as Fe or to native defects and their complexes.
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GaN-based light-emitting diodes on origami substrates
TL;DR: In this article, GaN-based light-emitting diodes (LEDs) were transferred to paper substrates after a laser lift-off (LLO) process with an ArF excimer laser system to remove the sapphire substrate and produce freestanding blue LED templates.