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Institution

Sony Broadcast & Professional Research Laboratories

CompanyTaipei, Taiwan
About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 38708 authors who have published 63864 publications receiving 865637 citations.


Papers
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Patent
01 Apr 2009
TL;DR: In this article, a position detection system including an imaging unit to capture an image of a projection plane of an electromagnetic wave, an EM unit to emit the electromagnetic wave to the projection plane, and a control unit to control emission of the EM by the EM unit.
Abstract: There is provided a position detection system including an imaging unit to capture an image of a projection plane of an electromagnetic wave, an electromagnetic wave emission unit to emit the electromagnetic wave to the projection plane, a control unit to control emission of the electromagnetic wave by the electromagnetic wave emission unit, and a position detection unit including a projected image detection section to detect a projected image of an object existing between the electromagnetic wave emission unit and the projection plane based on a difference between an image of the projection plane captured during emission of the electromagnetic wave fay the electromagnetic wave emission unit and an image of the projection plane captured during no emission of the electromagnetic wave, and a position detection section to detect a position of the object based on a position of the projected image of the object.

128 citations

Patent
30 Sep 2009
TL;DR: In this paper, an image processing apparatus includes an image display device, an instruction position detecting unit to accept, via an operating screen having multiple operating areas provided to a display screen of the image display devices, instructions from a user and detect and output the position of the instruction operation on the operating face; a storage unit to store and hold image data; and a display control unit to control display of an image according to the image stored and held in at least the storage unit.
Abstract: An image processing apparatus includes: an image display device; an instruction position detecting unit to accept, via an operating screen having multiple operating areas provided to a display screen of the image display device, instructions from a user and detect and output the position of the instruction operation on the operating face; a storage unit to store and hold image data; and a display control unit to control display of an image according to the image data stored and held in at least the storage unit on the image display device; wherein, if the user performs a tracing operation on the operating face, the display control unit controls the display of the image on the display screen of the image display device so as to change, according to the operated operating area and direction of operation that is distinguished based on the detecting output from the instruction position detecting unit.

128 citations

Patent
12 Feb 2008
TL;DR: In this article, a display device including a pixel array unit having pixel circuits arranged in a form of a matrix, and a control unit having a writing scanning unit for outputting, to the sampling transistor, an outputting writing scanning pulse.
Abstract: Disclosed herein is a display device including: a pixel array unit having pixel circuits arranged in a form of a matrix; and a control unit having a writing scanning unit for outputting, to the sampling transistor, a writing scanning pulse The control unit effects control to supply a control input terminal of the drive transistor with a fixed potential for a threshold value correcting operation for retaining a voltage corresponding to a threshold voltage of the drive transistor in the storage capacitor When setting a voltage across the storage capacitor to the threshold voltage of the drive transistor by repeating the threshold value correcting operation a plurality of times on a time division basis, the control unit effects control to perform each the threshold value correcting operation and the sampling transistor to a conducting state

128 citations

Journal ArticleDOI
TL;DR: In this article, the band-gap energy of II-VI compound semiconductors was calculated using a modified dielectric theory and the calculated bandgap energies of MgS and MgSe were 4.62 and 3.67 eV.
Abstract: The band-gap energy of II-VI compound semiconductors was simply calculated using a modified dielectric theory. The calculated band-gap energies of MgS and MgSe were 4.62 and 3.67 eV. From the extrapolation of the band-gap energies of ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mg}}_{x}\mathrm{Se}$ and ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mg}}_{x}\mathrm{S},$ the band-gap energies of MgSe and MgS of zinc blende at room temperature were determined to be 3.59 and $4.45\ifmmode\pm\else\textpm\fi{}0.2\mathrm{eV},$ almost the same as the value calculated using the modified dielectric theory. The bowing parameter of the ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mg}}_{x}\mathrm{Se}$ ternary alloy was experimentally obtained as 0 eV, which can be explained in terms of the modified dielectric theory. The lattice constant of the quaternary alloy ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mg}}_{x}{\mathrm{S}}_{y}{\mathrm{Se}}_{1\ensuremath{-}y}$ can be expressed by Vegard's law [Z. Phys. 5, 17 (1921)]. The band-gap energy of ${\mathrm{Zn}}_{1\ensuremath{-}x}{\mathrm{Mg}}_{x}{\mathrm{S}}_{y}{\mathrm{Se}}_{1\ensuremath{-}y}$ can be expressed by the parabolic function of the composition considering the bowing parameter, where we use of 4.65, 3.59, 3.68, and 2.69 eV as the band-gap energies of MgS, MgSe, ZnS, and ZnSe, respectively.

128 citations

Patent
07 Jul 1992
TL;DR: In this paper, a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generator and the mesh plate to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma.
Abstract: A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.

128 citations


Authors

Showing all 38711 results

NameH-indexPapersCitations
Hui Li1352982105903
Susumu Kitagawa12580969594
Shree K. Nayar11338445139
Takashi Kobayashi10360651385
Bo Huang9772840135
Muhammad Imran94305351728
Xiaodong Xu94112250817
Mitsuo Kawato8642235640
Takashi Yamamoto84140135169
Atsuo Yamada7844423989
Katsushi Ikeuchi7863620622
Yoshihiro Iwasa7745427146
Satoshi Miyazaki7634120483
Hiroshi Yamazaki7495327216
Alexei Gruverman6930118610
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20223
2021294
2020902
20191,297
20181,111
20171,078