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Institution

Sony Broadcast & Professional Research Laboratories

CompanyTaipei, Taiwan
About: Sony Broadcast & Professional Research Laboratories is a company organization based out in Taipei, Taiwan. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 38708 authors who have published 63864 publications receiving 865637 citations.


Papers
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Journal ArticleDOI
TL;DR: LiFePO 4 powders were synthesized under various conditions and the performance of the cathodes was evaluated using coin cells, the samples were characterized by X-ray diffraction, scanning electron microscope observations, Brunauer, Emmett, and Teller surface area measurements, particle-size distribution measurements, and Mossbauer spectroscopy.
Abstract: LiFePO 4 powders were synthesized under various conditions and the performance of the cathodes was evaluated using coin cells, The samples were characterized by X-ray diffraction, scanning electron microscope observations, Brunauer, Emmett, and Teller surface area measurements, particle-size distribution measurements, and Mossbauer spectroscopy. Ab initio calculation was used to confirm the experimental redox potentials and Mossbauer parameters. The choice of a moderate sintering temperature (500°C 95% of the 170 mAh/g theoretical capacity at room temperature. There are two main obstacles to achieving optimum charge/discharge performance of LiFePO 4 : (i) undesirable particle growth at T > 600°C and (ii) the presence of a noncrystalline residual Fe 3+ phase at T < 500°C.

1,698 citations

Patent
10 Sep 2009
TL;DR: In this article, a thin film transistor with a channel layer consisting of a conductive oxide semiconductor, a pair of electrodes on the channel layer, and a protective film covering an exposed surface of the channel, exposed to the gap between the pairs of electrodes.
Abstract: The present invention provides a thin film transistor including: a channel layer mainly containing a conductive oxide semiconductor; a pair of electrodes on the channel layer; and a protective film covering an exposed surface of the channel layer, exposed to the gap between the pair of electrodes. The protective film includes at least an oxygen transmission film in contact with the channel layer, and an oxygen disturbance film hardly transmitting oxygen in comparison with the oxygen transmission film, in this order from the channel layer side. A length of the oxygen disturbance film in a direction where the pair of electrodes face each other is equal to or larger than a value obtained by multiplying a width of the pair of electrodes in a direction orthogonal to the direction where the pair of electrodes face each other by 0.55.

986 citations

Patent
26 May 1999
TL;DR: Arbitrary digital information is embedded within a stream of digital data, in a way that avoids detection by a casual observer and that allows a user to determine whether the digital data have been modified from their intended form.
Abstract: Arbitrary digital information is embedded within a stream of digital data, in a way that avoids detection by a casual observer and that allows a user to determine whether the digital data have been modified from their intended form. The embedded information may only be extracted as authorized and may be used to verify that the original digital data stream has not been modified.

982 citations

Proceedings ArticleDOI
05 Dec 2005
TL;DR: In this article, a spin torque transfer magnetization switching (STS) based nonvolatile memory called spin-RAM was presented for the first time, which is based on magnetization reversal through an interaction of a spin momentum-torque-transferred current and a magnetic moment of memory layers in magnetic tunnel junctions (MTJ).
Abstract: A novel nonvolatile memory utilizing spin torque transfer magnetization switching (STS), abbreviated spin-RAM hereafter, is presented for the first time The spin-RAM is programmed by magnetization reversal through an interaction of a spin momentum-torque-transferred current and a magnetic moment of memory layers in magnetic tunnel junctions (MTJs), and therefore an external magnetic field is unnecessary as that for a conventional MRAM This new programming mode has been accomplished owing to our tailored MTJ, which has an oval shape of 100 times 150 nm The memory cell is based on a 1-transistor and a 1-MTJ (ITU) structure The 4kbit spin-RAM was fabricated on a 4 level metal, 018 mum CMOS process In this work, writing speed as high as 2 ns, and a write current as low as 200 muA were successfully demonstrated It has been proved that spin-RAM possesses outstanding characteristics such as high speed, low power and high scalability for the next generation universal memory

961 citations

Proceedings ArticleDOI
23 Jun 1999
TL;DR: A simple algorithm is described that computes the radiometric response function of an imaging system, from images of an arbitrary scene taken using different exposures, to fuse the multiple images into a single high dynamic range radiance image.
Abstract: A simple algorithm is described that computes the radiometric response function of an imaging system, from images of an arbitrary scene taken using different exposures. The exposure is varied by changing either the aperture setting or the shutter speed. The algorithm does not require precise estimates of the exposures used. Rough estimates of the ratios of the exposures (e.g. F-number settings on an inexpensive lens) are sufficient for accurate recovery of the response function as well as the actual exposure ratios. The computed response function is used to fuse the multiple images into a single high dynamic range radiance image. Robustness is tested using a variety of scenes and cameras as well as noisy synthetic images generated using 100 randomly selected response curves. Automatic rejection of image areas that have large vignetting effects or temporal scene variations make the algorithm applicable to not just photographic but also video cameras.

837 citations


Authors

Showing all 38711 results

NameH-indexPapersCitations
Taishi Takenobu5527712579
Takashi Yamaguchi5540814261
Keiko Furukawa531957612
Brant L. Candelore532418408
Lei Fu532219586
Toshio Suzuki5265112360
Hiroyuki Sasabe503419796
Masafumi Takahashi502688347
Chishio Hosokawa492878672
Zhenfu Cao494488830
Marten van Dijk4824212354
Masashi Shiraishi482518365
Håkan Jonsson471606081
Yoichiro Sako47100811703
Ghyslain Pelletier461217618
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20223
2021294
2020902
20191,297
20181,111
20171,078