Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
The era of hyper-scaling in electronics
TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI
A four-qubit germanium quantum processor
N.W. Hendrickx,W. I. L. Lawrie,Maximilian Russ,Floor van Riggelen,Sander L. de Snoo,Raymond N. Schouten,Amir Sammak,Giordano Scappucci,Menno Veldhorst +8 more
TL;DR: A four-qubit quantum processor based on hole spins in germanium quantum dots is demonstrated and coherent evolution is obtained by incorporating dynamical decoupling, a step towards quantum error correction and quantum simulation using quantum dots.
Journal ArticleDOI
Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap
TL;DR: The experimental results and DFT simulation results indicated that the tetragonal CsPb2Br5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
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Journal ArticleDOI
Fabrication and Characterization of Germanium ion-implanted IGFET's
Kang L. Wang,P.V. Gray +1 more
TL;DR: Fabrication of ion-implanted germanium IGFET's is described and the measured channel mobilities are related to annealing procedures for reducing interface state density.
Journal ArticleDOI
Germanium p-channel MOSFET's with high channel mobility, transconductance, and k-value
TL;DR: Germanium p-channel MOSFETs having effective channel lengths down to approximately 2.3 mu m (2.75- mu m gate length) have been fabricated in this article.
Dissertation
Strained SiGe-channel p-MOSFETs : impact of heterostructure design and process technology
TL;DR: This research investigates strained SiGe as a suitable channel material for p-MOSFETs using SiGe grown pseudomorphically on both relaxed SiGe and bulk Si substrates to understand the impact of channel thickness, Wchan, on hole mobility.
Journal ArticleDOI
Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices
TL;DR: In this article, a two dimensional-hydrodynamic model is carried out to predict the performance of short gate length power field effect transistors based on III-V semi-conductor systems.
Journal ArticleDOI
Improved hole transport properties of highly strained In0.35Ga0.65As channel double-modulation-doped structures grown by MBE on GaAs
TL;DR: In this paper, a double-modulation-doped field effect transistors with a 0.4-μm gate length and a 20-micrometer gate width were fabricated, which provided both a high mobility of 354 cm 2 /V s and a high sheet hole concentration of 1.23 x 10 12 cm -2 at room temperature.
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