Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
More filters
Journal ArticleDOI
High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
The era of hyper-scaling in electronics
TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI
A four-qubit germanium quantum processor
N.W. Hendrickx,W. I. L. Lawrie,Maximilian Russ,Floor van Riggelen,Sander L. de Snoo,Raymond N. Schouten,Amir Sammak,Giordano Scappucci,Menno Veldhorst +8 more
TL;DR: A four-qubit quantum processor based on hole spins in germanium quantum dots is demonstrated and coherent evolution is obtained by incorporating dynamical decoupling, a step towards quantum error correction and quantum simulation using quantum dots.
Journal ArticleDOI
Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap
TL;DR: The experimental results and DFT simulation results indicated that the tetragonal CsPb2Br5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
More filters
Journal ArticleDOI
Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
TL;DR: In this paper, the effect of the roughness of the Ge/GeSi interface roughness on the 2D hole gas mobility was studied, where a thin Ge layer was employed as the conduction channel for the two-dimensional hole gas.
Proceedings ArticleDOI
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications
Marko Radosavljevic,Tim Ashley,Aleksey D. Andreev,S. D. Coomber,G. Dewey,M. T. Emeny,M. Fearn,D.G. Hayes,K.P. Hilton,Mantu K. Hudait,R. Jefferies,Trevor Martin,Ravi Pillarisetty,Willy Rachmady,Titash Rakshit,S. J. Smith,Michael J. Uren,David J. Wallis,P.J. Wilding,R. Chau +19 more
TL;DR: In this paper, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure is described, achieving peak transconductance (Gm) of 510 muS/mum and cut-off frequency (fT) of 140 GHz at supply voltage of 0.5V.
Proceedings ArticleDOI
Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications
Marko Radosavljevic,Benjamin Chu-Kung,S. Corcoran,G. Dewey,Mantu K. Hudait,J. M. Fastenau,Jack Portland Kavalieros,W. K. Liu,D. Lubyshev,Matthew V. Metz,K. Millard,Niloy Mukherjee,W. Rachmady,Uday Shah,Robert S. Chau +14 more
TL;DR: In this article, an advanced composite high-K gate stack (4nm TaSiO x -2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate is described.
Journal ArticleDOI
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
TL;DR: Wafer bonding with stop layers is the most general approach with the ability to create ultra-thin layers of strained Si, SiGe, and Ge on-insulator with low threading dislocation densities and precise control over layer thickness.
Journal ArticleDOI
Desorption kinetics of GeO from GeO2/Ge structure
Shengkai Wang,Koji Kita,Lee Choonghyun,Toshiyuki Tabata,Tomonori Nishimura,Kosuke Nagashio,Akira Toriumi +6 more
TL;DR: In this paper, the desorption kinetics of germanium monoxide (GeO), including the diffusion process during GeO desoruption, the desoreption activation energy of GeO, and the different mechanisms of geO desoroption.
Related Papers (5)
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more