Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Improving carrier mobility of polycrystalline Ge by Sn doping.
TL;DR: The results thus demonstrate the usefulness of Sn doping of polycrystalline Ge and the importance of temperature while incorporating Sn and make it possible to fabricate advanced Ge-based devices including high-speed thin-film transistors.
Journal ArticleDOI
Atomic and electronic structure of the ferroelectric BaTiO3/Ge(001) interface
Kurt Fredrickson,Patrick Ponath,Agham Posadas,Martha R. McCartney,Toshihiro Aoki,David J. Smith,Alexander A. Demkov +6 more
TL;DR: In this paper, a combination of density functional theory, atomic-resolution electron microscopy and in situ photoemission spectroscopy is used to investigate the electronic properties and atomic structure of the BaTiO3/Ge interface.
Journal ArticleDOI
A four-qubit germanium quantum processor
N.W. Hendrickx,W. I. L. Lawrie,Maximilian Russ,F. van Riggelen,S.L. de Snoo,Raymond N. Schouten,Amir Sammak,Giordano Scappucci,Menno Veldhorst +8 more
TL;DR: In this article, a four-qubit quantum processor based on hole spins in germanium quantum dots is presented, where the quantum dots are defined in a two-by-two array and obtain controllable coupling along both directions.
Journal ArticleDOI
Anelastic Behavior in GaAs Semiconductor Nanowires
Bin Chen,Qiang Gao,Yanbo Wang,Xiaozhou Liao,Yiu-Wing Mai,Hark Hoe Tan,Jin Zou,Simon P. Ringer,Chennupati Jagadish +8 more
TL;DR: The mechanical behavior of vertically aligned single-crystal GaAs nanowires grown on GaAs(111)B surface was investigated and anelasticity was observed, which opens up the prospect of using nanowire materials for nanoscale damping applications.
Journal ArticleDOI
Carrier mobility in strained Ge nanowires
TL;DR: In this paper, the electron and hole mobilities in Ge nanowires with diameter up to 10nm were analyzed. And they showed that the phonon-limited mobility is strongly dependent on the diameter and on the orientation of the nanowire, and is also very responsive to unaxial strains.
References
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Proceedings ArticleDOI
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