Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
The Challenges of Developing Biosensors for Clinical Assessment: A Review
TL;DR: In this paper, a review of the challenges for the development of biosensors for clinical assessment and its broad application in multidisciplinary fields is presented, highlighting the following technologies: magnetoresistive (MR)-based, transistor-based, quartz crystal microbalance (QCM), and optical-based.
Journal ArticleDOI
Strain-Free Layered Semiconductors for 2D Transistors with On-State Current Density Exceeding 1.3 mA μm-1.
Congwei Tan,Jianfeng Jiang,Jingyue Wang,Meng Xiao Yu,Tengxiu Tu,Xiaoyin Gao,Junchuan Tang,Congcong Zhang,Yichi Zhang,Xuehan Zhou,Liming Zheng,Chenguang Qiu,Hailin Peng +12 more
TL;DR: Strain-free 2D Bi2O2Se provides a promising material platform for studying novel quantum phenomena and exploration of high-performance low-power electronics as discussed by the authors , which enables the observation of Shubnikov-de Haas quantum oscillations and shows substantially higher (>4 times) mobility over previous in-plane 2D crystals.
Journal ArticleDOI
Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors
H.-S. Lan,Chee-Wee Liu +1 more
TL;DR: In this paper, the dependence of ballistic electron current on Sn content, sidewall orientations, fin width, and uniaxial tensile stress is theoretically studied for the GeSn fin field effect transistors.
Dissertation
Spin dependent transport in semiconductor nanostructures
TL;DR: In this paper, a series of transport experiments was conducted to investigate many body e↵ects in electrons and holes in one dimension using lithographically patterned surface gates in In0.75Ga0.25As and p-type Ge quantum wires.
Journal ArticleDOI
Structure and effects of annealing in colloidal matrix-free Ge quantum dots.
Yuanpeng Zhang,Ali Karatutlu,Ali Karatutlu,Osman Ersoy,William R. Little,Giannantonio Cibin,Andrew J. Dent,Andrei V. Sapelkin +7 more
TL;DR: It is suggested that as-prepared samples are best described by the core-shell model with a small nano-crystalline core and an amorphous outer layer terminated with oxygen or hydrogen depending on the synthesis route.
References
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Proceedings ArticleDOI
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
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Proceedings ArticleDOI
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