Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal Article
Advantage of (100)/ Oriented Channels in Biaxially- and Uniaxially Strained-Ge-On-Insulator pMOSFETs with NiGe Metal Source/Drain
TL;DR: In this paper, the authors compared current drivability between (001)/<;100> and (001/<;110> strained Ge-on-insulator pMOSFETs under biaxial and uniaxially stress.
Journal ArticleDOI
Ternary SiGeSn alloy nanocrystals via nonthermal plasma synthesis
Journal ArticleDOI
Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold
W. I. L. Lawrie,Maximilian Rimbach-Russ,F. van Riggelen,N.W. Hendrickx,S. L. D. Snoo,Amir Sammak,Giordano Scappucci,Jonas Helsen,Menno Veldhorst +8 more
TL;DR: In this article , single-qubit randomized benchmarking in a two-dimensional array of spin qubits, finding native gate fidelities as high as 99.992(1)%.
Journal ArticleDOI
Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors
TL;DR: In this paper, the conductance quantization in one-dimensional Ge-core/a-Si-shell nanowires at low temperatures was demonstrated for the first time, and the results indicated that the Ge-cores are multi-mode ballistic conductors with a mean free-path up to 500 nm.
Journal ArticleDOI
Direct-Bandgap Electroluminescence From Germanium With Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure
TL;DR: In this paper, an electrical doping method to realize the high n-type doping for a germanium (Ge) layer in a low-doped N-type Ge metal-oxide-semiconductor (MOS) structure in the accumulation condition is proposed, which maintains the initial crystal quality of Ge.
References
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Proceedings ArticleDOI
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
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Proceedings ArticleDOI
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