scispace - formally typeset
Journal ArticleDOI

Academic and industry research progress in germanium nanodevices

Ravi Pillarisetty
- 17 Nov 2011 - 
- Vol. 479, Iss: 7373, pp 324-328
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Abstract
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.

read more

Citations
More filters
Journal ArticleDOI

Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process

TL;DR: In this paper, a flash lamp annealing process with a Xenon lamp (lamp duration: 3 ms; energy density: 56 J/cm2) was used to increase the surface temperature to nearly 800 °C.
Journal ArticleDOI

Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors

TL;DR: In this paper, the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) was reported.
Journal ArticleDOI

A steep-slope tellurium transistor with a native voltage amplifying threshold switch

TL;DR: In this paper , the authors proposed a low-power transistor solution for a steep-slope transistor in which Te serves as the channel material and the TS material at the same time.
Journal ArticleDOI

Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer.

TL;DR: The surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.
References
More filters
Proceedings ArticleDOI

A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors

TL;DR: In this article, the authors describe a novel strained transistor architecture which is incorporated into a 90nm logic technology on 300mm wafers, which features an epitaxially grown strained SiGe film embedded in the source drain regions.
Journal ArticleDOI

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI

High-k/Ge MOSFETs for future nanoelectronics

TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
Related Papers (5)