Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Bi 2 O 2 Se:Bi 2 O 5 Se High-K Stack as a 2D Analog of Si:SiO 2 : A First-Principles Study
Jingyi Zhang,Huanglong Li +1 more
Journal ArticleDOI
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
Seunghun Baik,Hyeokjin Kwon,Chuck Paeng,He Zhang,Bodo Kalkofen,Jae Eun Jang,Y. S. Kim,Hyuk-Jun Kwon +7 more
TL;DR: In this paper, a flash lamp annealing process with a Xenon lamp (lamp duration: 3 ms; energy density: 56 J/cm2) was used to increase the surface temperature to nearly 800 °C.
Journal ArticleDOI
Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors
Cheng Lun Hsin,Chin-Hsien Chou +1 more
TL;DR: In this paper, the formation of buffer-free germanium (Ge) on silicon by a two-step rapid melting growth technique for separate absorption and multiplication (SAM) avalanche photodetectors (APDs) was reported.
Journal ArticleDOI
A steep-slope tellurium transistor with a native voltage amplifying threshold switch
Xinxin Wang,Huanglong Li +1 more
TL;DR: In this paper , the authors proposed a low-power transistor solution for a steep-slope transistor in which Te serves as the channel material and the TS material at the same time.
Journal ArticleDOI
Robust atomic-structure of the 6 × 2 reconstruction surface of Ge(110) protected by the electronically transparent graphene monolayer.
Wenjing Chen,Xin-Xin Wang,Shujing Li,Chao Yan,Lin He,Ping Zhang,Yu Yang,Donglin Ma,Jia-Cai Nie,Rui-Fen Dou +9 more
TL;DR: The surface reconstruction was confirmed for the post-annealing-graphene-covered Ge(110) surface via STM, and was found to be quite air-stable, owing to the protection of the graphene monolayer against surface oxidation, which could be advantageous for directly fabricating graphene/Ge-hybrid high-speed electronics and optoelectronics based on conventional microelectronics technology.
References
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Proceedings ArticleDOI
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Proceedings ArticleDOI
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