Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
The era of hyper-scaling in electronics
TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI
A four-qubit germanium quantum processor
N.W. Hendrickx,W. I. L. Lawrie,Maximilian Russ,Floor van Riggelen,Sander L. de Snoo,Raymond N. Schouten,Amir Sammak,Giordano Scappucci,Menno Veldhorst +8 more
TL;DR: A four-qubit quantum processor based on hole spins in germanium quantum dots is demonstrated and coherent evolution is obtained by incorporating dynamical decoupling, a step towards quantum error correction and quantum simulation using quantum dots.
Journal ArticleDOI
Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap
TL;DR: The experimental results and DFT simulation results indicated that the tetragonal CsPb2Br5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
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Proceedings ArticleDOI
Germanium for advanced CMOS anno 2009: a SWOT analysis
Matty Caymax,Geert Eneman,Florence Bellenger,Clement Merckling,Annelies Delabie,Gang Wang,Roger Loo,Eddy Simoen,Jerome Mitard,B. De Jaeger,Geert Hellings,K. De Meyer,Marc Meuris,M.M. Heyns +13 more
TL;DR: Germanium has emerged as an exciting alternative material for high-performance scaled CMOS, however not without difficulties as discussed by the authors, where two techniques to passivate the channel/dielectric interface are discussed.
Proceedings ArticleDOI
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack
TL;DR: In this article, an n-and p-type Ge-MOS devices (EOT /spl sim/7.5 /spl Aring/, J/sub g/ /spl Sim/ 10/sup -3/ A/cm/sup 2/) are fabricated on both n- and p-substrates, using novel surface passivation and TaN/HfO/sub 2/Ge gate stack.
Journal ArticleDOI
p-channel germanium MOSFETs with high channel mobility
TL;DR: In this article, the fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported and a self-aligned dummy-gate process suitable for circuit integration is utilized.
Proceedings ArticleDOI
Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics
C. H. Huang,M. Y. Yang,Albert Chin,W.J. Chen,Chunxiang Zhu,Byung Jin Cho,M.F. Li,Dim-Lee Kwong +7 more
TL;DR: In this article, the authors demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics.
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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more