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Journal ArticleDOI

Academic and industry research progress in germanium nanodevices

Ravi Pillarisetty
- 17 Nov 2011 - 
- Vol. 479, Iss: 7373, pp 324-328
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Abstract
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.

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Dissertation

Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity

Kailang Liu
TL;DR: In this article, the authors investigate the growth of SiGe nanostructures driven by its hetero-epitaxial elasticity and propose a model to compare two pathways of morphological evolution of SK growth and uncover the mechanisms of the race and transition.
Journal ArticleDOI

Interplay Between Strain and Thickness on the Effective Carrier Lifetime of Buffer-Mediated Epitaxial Germanium Probed by the Photoconductance Decay Technique

TL;DR: In this paper , a contactless effective minority carrier lifetime of epitaxially grown unstrained and in-plane <110> biaxially tensile-strained (001) germanium epilayers measured using microwave-reflectance photoconductance decay measurements was reported.
Journal ArticleDOI

Perspectives of controlled GeSi dots on prepatterned Si (001) substrates

TL;DR: In this article, Zhong et al. studied the fundamental physics during heteroepitaxial growth of self-assembled GeSi dots on Si (001) substrates.
Proceedings ArticleDOI

Direct bonding of germanium and diamond substrates by hydrophilic bonding

TL;DR: In this paper , the authors demonstrate the direct bonding of the Germanium (Ge) substrate with a diamond heat-dissipating substrate, which has the highest thermal conductivity among solids.
References
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Proceedings ArticleDOI

A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors

TL;DR: In this article, the authors describe a novel strained transistor architecture which is incorporated into a 90nm logic technology on 300mm wafers, which features an epitaxially grown strained SiGe film embedded in the source drain regions.
Journal ArticleDOI

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI

High-k/Ge MOSFETs for future nanoelectronics

TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
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