Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI
The era of hyper-scaling in electronics
TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI
A four-qubit germanium quantum processor
N.W. Hendrickx,W. I. L. Lawrie,Maximilian Russ,Floor van Riggelen,Sander L. de Snoo,Raymond N. Schouten,Amir Sammak,Giordano Scappucci,Menno Veldhorst +8 more
TL;DR: A four-qubit quantum processor based on hole spins in germanium quantum dots is demonstrated and coherent evolution is obtained by incorporating dynamical decoupling, a step towards quantum error correction and quantum simulation using quantum dots.
Journal ArticleDOI
Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap
TL;DR: The experimental results and DFT simulation results indicated that the tetragonal CsPb2Br5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
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Proceedings Article
Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI
Jerome Mitard,C. Shea,B. DeJaeger,A. Pristera,Gang Wang,Michel Houssa,Geert Eneman,Geert Hellings,Wei-E Wang,J.C. Lin,Frederik Leys,Roger Loo,Gillis Winderickx,E. Vrancken,Andre Stesmans,Kristin DeMeyer,Matty Caymax,Luigi Pantisano,Marc Meuris,M.M. Heyns +19 more
TL;DR: For the first time, an STI module is integrated in an advanced 70nm Ge-pFET technology allowing EOT scaling down to 0.85nm as mentioned in this paper, and the impact of this aggressive scaling on hole mobility is also investigated by temperature measurements.
Journal ArticleDOI
High Mobility Strained Ge pMOSFETs With High- $\kappa$ /Metal Gate
TL;DR: In this article, a pMOSFET with high-kappa Si/SiO2/HfO 2/TiN gate stacks is fabricated on Si0.2Ge0.8 virtual substrates and the effective oxide thickness is approximately 1.4 nm with low gate leakage current.
Proceedings ArticleDOI
Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility
Duygu Kuzum,Abhijit Pethe,Tejas Krishnamohan,Yasuhiro Oshima,Yun Sun,James P. McVittie,Piero Pianetta,P.C. Mclntyre,Krishna C. Saraswat +8 more
TL;DR: In this paper, the effect of surface orientation on electron mobility was investigated experimentally through low temperature mobility measurements, and the minimum density of interface states (DDit) of 3x1011 cm-2 V-1 was demonstrated and Dit across the bandgap was extracted.
Journal ArticleDOI
High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures
TL;DR: In this paper, a two-dimensional hole gas structure consisting of a strained germanium channel on relaxed Ge07Si03 buffer layers was grown by molecular-beam epitaxy sample processing was optimized to substantially reduce the contribution from the parasitic conducting layers.
Journal ArticleDOI
Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
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