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Journal ArticleDOI

Academic and industry research progress in germanium nanodevices

Ravi Pillarisetty
- 17 Nov 2011 - 
- Vol. 479, Iss: 7373, pp 324-328
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Abstract
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.

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Citations
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Journal ArticleDOI

High-K materials and metal gates for CMOS applications

TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
Journal ArticleDOI

The era of hyper-scaling in electronics

TL;DR: This Perspective argues that electronics is poised to enter a new era of scaling – hyper-scaling – driven by advances in beyond-Boltzmann transistors, embedded non-volatile memories, monolithic three-dimensional integration and heterogeneous integration techniques.
Journal ArticleDOI

A four-qubit germanium quantum processor

TL;DR: A four-qubit quantum processor based on hole spins in germanium quantum dots is demonstrated and coherent evolution is obtained by incorporating dynamical decoupling, a step towards quantum error correction and quantum simulation using quantum dots.
Journal ArticleDOI

Shape and phase evolution from CsPbBr3 perovskite nanocubes to tetragonal CsPb2Br5 nanosheets with an indirect bandgap

TL;DR: The experimental results and DFT simulation results indicated that the tetragonal CsPb2Br5 is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
Journal ArticleDOI

Si–Ge–Sn alloys: From growth to applications

TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
References
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Proceedings ArticleDOI

Comprehensive study of GeO 2 oxidation, GeO desorption and GeO 2 -metal interaction -understanding of Ge processing kinetics for perfect interface control-

TL;DR: Based on the understanding of kinetic views of GeO desorption from GeO 2 /Ge stacks, thermodynamic control of the qualities of both geO 2 films and GeO2/Ge interfaces was demonstrated in this article.
Proceedings ArticleDOI

A new strained-SOI/GOI dual CMOS technology based on local condensation technique

TL;DR: In this article, the authors integrated strained Si-on-insulator NMOSFETs and strained SiGe-on insulator PMOSFets using the local condensation technique.
Proceedings Article

High mobility Ge pMOSFETs with ∼ 1nm thin EOT using Al 2 O 3 /GeO x /Ge gate stacks fabricated by plasma post oxidation

TL;DR: In this article, a novel plasma post oxidation method has been proposed to form an Al 2 O 3 /GeO x /Ge gate stack by using oxygen plasma through a thin ALD Al O 3 layer.
Proceedings ArticleDOI

Logic performance evaluation and transport physics of Schottky-gate III–V compound semiconductor quantum well field effect transistors for power supply voltages (V CC ) ranging from 0.5v to 1.0v

TL;DR: In this article, the performance of Schottkygate In 0.7 Ga 0.3 As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc = 0.5 to 1.0V.
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