Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
A catalyst-free synthesis of germanium nanowires obtained by combined X-ray chemical vapour deposition of GeH4 and low-temperature thermal treatment techniques
Chiara Demaria,Aldo Arrais,Paola Benzi,Enrico Boccaleri,Paola Antoniotti,Roberto Rabezzana,Lorenza Operti +6 more
TL;DR: In this paper, a catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and low-temperature thermal treatments, produced high yields of the nanoproducts with the GeH4 reactant gas.
Journal ArticleDOI
Deformation of the Interatomic Bonds in the Upper Layers of the Ge(111) Surface with c(2 × 8), 7 × 7, and 5 × 5 Structures
A. E. Dolbak,R. A. Zhachuk +1 more
TL;DR: In this paper, the deformation of the interatomic bonds in the upper atomic layers of the Ge(111) surface with c(2 × 8), 7 × 7, and 5 × 5 structures is studied using ab initio calculations.
Journal ArticleDOI
Energetic degeneracy and electronic structures of germanium trimers doped with titanium
Le Nhan Pham,Salvy P. Russo +1 more
TL;DR: Total 14 electronic transitions starting from the 2A' and 2A″ states were assigned to five out of six visible bands in the experimental anion photoelectron spectrum of TiGe3 - and each band was proven to be caused by multiple one-electron detachments from two populated anionic states.
Development of Silicon Photonic Multi Chip Module Transceivers
TL;DR: The work in this dissertation is centered around the development of silicon photonic multi chip module transceivers to aid in the deployment of siliconPhotonics within data centers.
Journal ArticleDOI
Size-tunable germanium particles prepared by self-sustaining reduction of germanium oxide
TL;DR: In this article, a self-sustained reaction of GeO2 with Zn, Mg, and NaBH4 was used to synthesize highly crystalline germanium particles.
References
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Proceedings ArticleDOI
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