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Journal ArticleDOI

Academic and industry research progress in germanium nanodevices

Ravi Pillarisetty
- 17 Nov 2011 - 
- Vol. 479, Iss: 7373, pp 324-328
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.
Abstract
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.

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Citations
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Journal ArticleDOI

Te homogeneous precipitation in Ge dislocation loop vicinity

TL;DR: In this paper, high-resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge.
Journal ArticleDOI

Influence of grain boundaries on the properties of polycrystalline germanium

TL;DR: In this paper, a polycrystalline Ge layer was synthesized on a GeO2-coated substrate using advanced solid-phase crystallization at 375 °C.
Journal ArticleDOI

Pulsed Ion-Beam Treatment of Germanium Implanted by Antimony Ions

TL;DR: In this paper, the surface morphology and depth profiles of Sb, the crystalline structure of the layer, the concentration of electrically active atoms, and photoluminescence of the Ge:Sb layers are investigated.
Journal ArticleDOI

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

TL;DR: The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector.
References
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Proceedings ArticleDOI

A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors

TL;DR: In this article, the authors describe a novel strained transistor architecture which is incorporated into a 90nm logic technology on 300mm wafers, which features an epitaxially grown strained SiGe film embedded in the source drain regions.
Journal ArticleDOI

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI

High-k/Ge MOSFETs for future nanoelectronics

TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
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