Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
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TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Ge-cap quantum-well bulk FinFET for 5 nm node CMOS integration
Erry Dwi Kurniawan,Kang-Hui Peng,Shang-Yi Yang,Yi-Yun Yang,Vasanthan Thirunavukkarasu,Yu-Hsien Lin,Yung-Chun Wu +6 more
Journal ArticleDOI
Growth pattern of doubly metal doped silicon clusters M2Sin with M2 = Mo2, Nb2, Ta2, W2, NbMo, TaW and n = 11–18. Formation of fused cages M2Si18
TL;DR: In this article, the structure of doubly transition metal doped silicon clusters M2Sin, M2Si18, NbMo, TaW were determined by DFT computations.
Journal ArticleDOI
Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films
TL;DR: In this paper, the mechanism of dopant redistribution via out-diffusion and re-evaporation is described, which is essential for Ge-based electronics and optical applications.
References
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Proceedings ArticleDOI
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Proceedings ArticleDOI
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