Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Journal ArticleDOI
Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
TL;DR: In this article, the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) was reported.
Journal Article
In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy
Liliya Nikolova,Mark J. Stern,Jennifer MacLeod,Bryan W. Reed,Heide Ibrahim,Geoffrey H. Campbell,Federico Rosei,Thomas LaGrange,Bradley J. Siwick +8 more
TL;DR: In this article, the authors performed a quantitative in situ study of explosive crystallization in amorphous germanium using dynamic transmission electron microscopy, and showed that the diffusivity of the material locally/immediately in advance of the exploding crystallization front is inconsistent with those of a liquid phase.
Journal ArticleDOI
Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect.
Jovian Delaforce,Masiar Sistani,Roman B. G. Kramer,Minh Anh Luong,Nicolas Roch,Walter M. Weber,Martien Den Hertog,Eric Robin,Cécile Naud,Alois Lugstein,Olivier Buisson +10 more
TL;DR: In this article, an Al-Ge-Al nanowire heterostructures featuring monocrystalline Al leads and abrupt metal-semiconductor interfaces are used to probe the low-temperature transport in intrinsic Ge quantum dots.
Proceedings ArticleDOI
Advantage of (001)/ oriented channels in biaxially- and uniaxially strained-Ge-on-insulator pMOSFETs with NiGe metal source/drain
Keiji Ikeda,Yoshihiko Moriyama,Yuuichi Kamimuta,Mizuki Ono,Toshifumi Irisawa,Minoru Oda,E. Kurosawa,Tsutomu Tezuka +7 more
TL;DR: In this paper, the authors compared current drivability between (001)/ and (001/ strained Ge-on-insulator pMOSFETs under biaxial and uniaaxial stress and found that the parasitic resistance was lower along direction than the counterpart.
Journal ArticleDOI
Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs
Fu-Ju Hou,Po-Jung Sung,Fu-Kuo Hsueh,Chien-Ting Wu,Yao-Jen Lee,Yiming Li,Seiji Samukawa,Tuo-Hung Hou +7 more
TL;DR: In this article, a feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW).
References
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Proceedings ArticleDOI
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
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Proceedings ArticleDOI
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Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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Journal ArticleDOI
High-k/Ge MOSFETs for future nanoelectronics
TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
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