Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
More filters
Journal ArticleDOI
Beyond Covalent Crosslinks: Applications of Supramolecular Gels
TL;DR: The examples presented here demonstrate unique benefits of supramolecular gels, including tunability, processability, and self-healing capability, enabling a new approach to solve engineering challenges.
Journal ArticleDOI
Ge1-xSnx materials: Challenges and applications
Roger Loo,Benjamin Vincent,Federica Gencarelli,Clement Merckling,Arul Kumar,Geert Eneman,Liesbeth Witters,Wilfried Vandervorst,Matty Caymax,Marc Heyns,Aaron Thean +10 more
TL;DR: In this article, the use of Ge1-xSnx for future (electrical) device applications and its fabrication with a special attention on recent achievements from imec was discussed, where compressive uniaxial and/or bi-axial strain implementation seems essential to substantially increase carriers velocity and to outperform current Si- and Si1-yGeybased devices, which is confirmed by theoretical calculations of the carrier mobility and device current.
Journal ArticleDOI
Ultimate nano-electronics
Nadine Collaert,A. Alian,Hiroaki Arimura,G. Boccardi,Geert Eneman,Jacopo Franco,Ts. Ivanov,Dennis Lin,Roger Loo,Clement Merckling,Jerome Mitard,M.A. Pourghaderi,Rita Rooyackers,S. Sioncke,Jianwu Sun,Anne Vandooren,Anabela Veloso,Anne S. Verhulst,Niamh Waldron,Liesbeth Witters,D. Zhou,Kathy Barla,Aaron Thean +22 more
TL;DR: This work will give an overview of the innovations in materials and new device concepts that will be needed to continue Moore's law to the sub-10nm technology nodes.
Journal ArticleDOI
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing
Jacopo Frigerio,Andrea Ballabio,Kevin Gallacher,Valeria Giliberti,Leonetta Baldassarre,Ross W. Millar,R. Milazzo,Luca Maiolo,Antonio Minotti,Federico Bottegoni,Paolo Biagioni,Douglas J. Paul,Michele Ortolani,A. Pecora,Enrico Napolitani,Giovanni Isella +15 more
TL;DR: In this paper, the combination of in situ doping and excimer laser annealing was used to improve the activation of phosphorous in germanium, achieving an activated n-doping concentration of 8.8 × 1019 cm−3.
Proceedings ArticleDOI
First experimental demonstration of Ge 3D FinFET CMOS circuits
TL;DR: In this article, the first experimental demonstration of Ge 3D CMOS circuits, based on the recessed fin structure, is reported. And the Ge FinFETs show superior gate electrostatic control over planar devices and sub-threshold slope (SS) as low as 93 and 73 mV/dec, respectively.
References
More filters
Proceedings ArticleDOI
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
Kaizad Mistry,C. Allen,C. Auth,B. Beattie,Daniel B. Bergstrom,M. Bost,M. Brazier,M. Buehler,Annalisa Cappellani,R. Chau,C. H. Choi,G. Ding,K. Fischer,Tahir Ghani,R. Grover,W. Han,D. Hanken,M. Hattendorf,J. He,J. Hicks,R. Huessner,D. Ingerly,Pulkit Jain,R. James,L. Jong,Subhash M. Joshi,C. Kenyon,K. Kuhn,K. Lee,Huichu Liu,J. Maiz,B. Mclntyre,P. Moon,J. Neirynck,S. Pae,C. Parker,D. Parsons,Chetan Prasad,L. Pipes,M. Prince,Pushkar Ranade,T. Reynolds,J. Sandford,Lucian Shifren,J. Sebastian,J. Seiple,D. Simon,Swaminathan Sivakumar,Pete Smith,C. Thomas,T. Troeger,P. Vandervoorn,S. Williams,K. Zawadzki +53 more
TL;DR: In this paper, a 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process, resulting in the highest drive currents yet reported for NMOS and PMOS.
Proceedings ArticleDOI
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
Tahir Ghani,Mark Armstrong,C. Auth,M. Bost,P. Charvat,G. Glass,T. Hoffmann,K. Johnson,C. Kenyon,Jason Klaus,B. McIntyre,Kaizad Mistry,Anand Portland Murthy,J. Sandford,M. Silberstein,Swaminathan Sivakumar,Pete Smith,K. Zawadzki,Scott E. Thompson,M. Bohr +19 more
TL;DR: In this article, the authors describe a novel strained transistor architecture which is incorporated into a 90nm logic technology on 300mm wafers, which features an epitaxially grown strained SiGe film embedded in the source drain regions.
Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI
High-k/Ge MOSFETs for future nanoelectronics
TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.
Related Papers (5)
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more