Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
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Photoactive materials and devices for energy-efficient soft wearable optoelectronic systems
TL;DR: In this paper , the authors provide an overview of high-performance photovoltaic/photoemissive materials and devices and their applications to soft wearable energy-efficient optoelectronic systems.
Journal ArticleDOI
Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(111)/GeO2 interface after capping with Al2O3 layer
S Paleari,Alessandro Molle,F. Accetta,Alessio Lamperti,Elena Cianci,Marco Fanciulli,Marco Fanciulli +6 more
TL;DR: In this article, the electrical activity of Ge dangling bonds was investigated at the interface between GeO 2 -passivated Ge(1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy.
Journal ArticleDOI
Optimal Oxide Passivation of Ge for Optoelectronics
William A. O'Brien,Bin Wu,Chad A. Stephenson,Kuijun Liang,Steven Cress,Vladimir Protasenko,Christina Arisio,Marya Lieberman,Huili Grace Xing,Mark A. Wistey +9 more
TL;DR: In this paper, the behavior of minority conduction electrons and their associated traps is investigated in the context of minority carrier photonic devices, and the authors conclude that suboxides confer better passivation than a GeO2 interface, as determined by PL intensity.
References
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