Journal ArticleDOI
Academic and industry research progress in germanium nanodevices
TLDR
Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.Abstract:
Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first material used in such devices. During the 1950s, just after the birth of the transistor, solid-state devices were almost exclusively manufactured from germanium. Today, one of the key ways to improve transistor performance is to increase charge-carrier mobility within the device channel. Motivated by this, the solid-state device research community is returning to investigating the high-mobility material germanium. Germanium-based transistors have the potential to operate at high speeds with low power requirements and might therefore be used in non-silicon-based semiconductor technology in the future.read more
Citations
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Proceedings ArticleDOI
Novel processing for access resistance reduction in Germanium devices
Ray Duffy,Maryam Shayesteh +1 more
TL;DR: In this paper, the experimental state-of-the-art in access resistance reduction in Ge devices is reviewed, highlighting in particular those techniques that have been applied to Si devices, but have not yet been properly optimized in Ge.
Journal ArticleDOI
Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles study
Kai Liu,Kai Liu,Eunjung Ko,Sangtae Kim,Jae-Hong Park,Jae-Hong Park,Cheol Seong Hwang,Jung-Hae Choi +7 more
Journal ArticleDOI
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting
R. Milazzo,Chiara Carraro,Jacopo Frigerio,Andrea Ballabio,Giuliana Impellizzeri,Daniele Scarpa,Alberto Andrighetto,Giovanni Isella,Enrico Napolitani +8 more
TL;DR: In this article, N-type doping of Ge layers epitaxially grown on Si by P ion-implantation and pulsed laser melting is reported, with or without a post-growth annealing cycle in order to reduce the amount of threading dislocations (TDs).
Journal ArticleDOI
The Limits of Electromechanical Coupling in Highly-Tensile Strained Germanium.
TL;DR: The electromechanical coupling of <111> Ge nanowires (NWs) is reported from unstrained conditions to the ultimate tensile strength, revealing the excellent prospects for utilizing strained Ge NWs in photodetector or piezoelectronic transistor applications, but significant challenges remain to realize strict direct bandgap devices.
Journal ArticleDOI
Theoretical prediction for growth behavior and electronic properties of monoanionic Ru2Gen− (n = 3–20) clusters
TL;DR: In this paper , a detailed theoretical study on the structural and electronic properties of monoanionic Ru2Gen− (n = 3-20) clusters using comprehensive genetic algorithm combined with density functional theory (CGA-DFT).
References
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Proceedings ArticleDOI
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