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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
MOSFET drain breakdown voltage
TL;DR: In this paper, the breakdown voltage of n-channel MOSFETs has been characterized for wide ranges of oxide thickness and substrate doping concentration, and two distinct regimes, one being channel-doping limited and the other being oxide-thickness limited, have been identified.
Journal ArticleDOI
Optimum doping profile of power MOSFET epitaxial layer
Xing-Bi Chen,Chenming Hu +1 more
TL;DR: The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-ceU spacing as discussed by the authors.
Journal ArticleDOI
Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances
TL;DR: In this article, a linearly graded drift drift region-doped profile was proposed to provide a high breakdown voltage while maintaining a high doping dose in the total drift region for minimizing the on-resistance.
Proceedings ArticleDOI
Oxide-nitride-oxide antifuse reliability
TL;DR: In this paper, a low-resistance oxide-nitride-oxide (ONO) antifuse was used for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuses resistance stability, and effective screen.
Proceedings ArticleDOI
The effect of channel hot carrier stressing on gate oxide integrity in MOSFET
TL;DR: In this paper, the correlation between channel hot carrier stressing and gate oxide integrity was studied, and it was shown that the oxide charge-to-breakdown decreases linearly with the amount of hole fluence injected during the channel hot hole stressing.