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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Improved a priori interconnect predictions and technology extrapolation in the GTX system
Yu Cao,Chenming Hu,Xuejue Huang,Andrew B. Kahng,Igor L. Markov,Michael Oliver,Dirk Stroobandt,Dennis Sylvester +7 more
TL;DR: A new tool is developed, the GSRC technology extrapolation system (GTX), which allows capture of knowledge about rapid changes in technology and rapid development of new studies, and identifies several "nontraditional" facets of interconnect prediction and quantify their impact on key technology extrapolations.
Proceedings ArticleDOI
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
Takeshi Nogami,Ming He,X. Zhang,Kunaljeet Tanwar,Raghuveer R. Patlolla,James J. Kelly,David L. Rath,Mahadevaiyer Krishnan,X. Lin,Oscar van der Straten,Hosadurga Shobha,James Chingwei Li,Anita Madan,Philip L. Flaitz,C. Parks,Chenming Hu,Christopher J. Penny,A. Simon,Tibor Bolom,J. Maniscalco,Donald F. Canaperi,Terry A. Spooner,Daniel C. Edelstein +22 more
TL;DR: In this article, the authors proposed a new wet chemistry to suppress the top-comer slit void defect in dual damascene hardware at 10 nm node dimensions, and showed that O-free CVD-Co may solve this problem.
Journal ArticleDOI
Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel
Ming-Yen Kao,Yen-Kai Lin,Harshit Agarwal,Yu-Hung Liao,Pragya Kushwaha,Avirup Dasgupta,Sayeef Salahuddin,Chenming Hu +7 more
TL;DR: In this paper, a new design to overcome the nonuniformity of capacitance matching along the channel of a negative capacitance field effect transistor is presented, in which the thickness of SiO2 at the edge regions of the channel can be increased while maintaining the thickness at the center region.
Proceedings ArticleDOI
Hot carriers induced degradation in thin gate oxide MOSFETs
TL;DR: In this article, the degradation of thin gate oxide (∼100A) n and p-channel MOSFETs subjected to the substrate hot carrier injection is discussed.
Journal ArticleDOI
A full-process damage detection method using small MOSFET and protection diode
TL;DR: In this article, a short constant voltage stress was applied to the gate of triple metal process transistors to uncover otherwise undetectable process-induced damage, 1 s at 9 MV/cm was enough to distinguish the damaged devices from the undamaged ones clearly in the transistor characteristics.