Chenming Hu

TL;DR: In this paper, the electromigration reliability of copper interconnects has been studied under DC, pulse-DC, and bipolar current stressing conditions, and it was found that the DC and pulse-dc lifetimes of Cu are about two orders of magnitude longer than that of Al-2%Si at 275 degrees C, and about four orders of order of magnitude shorter than Al 2%Si when extrapolated to room temperature.

TL;DR: In this article, a modified model for an electron mean-free path (MFP) in the substrate current based on the concept of energy relaxation was proposed, and the different between the energy and momentum relaxation MFP was clarified, and it was shown that a substrate current model with modified MFP can explain the temperature dependence of substrate current.

TL;DR: In this article, a new tunneling transistor structure is introduced that offers several advantages over prior designs, including substantially increased tunneling area and improved turn on/off swing by engineering doping profile to ensure tunneling initiates in high electric field region.

TL;DR: In this article, a new scheme was proposed to consider the dielectric (DE) phases inside polycrystalline ferroelectric (FE) materials, and a Sentaurus TCAD structure was constructed with the extracted parameters, and the simulated P-E curve was in a good agreement with the experimental data.

TL;DR: In this paper, a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode, is presented.