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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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An Analytical Crosstalk Model with Application to ULSI Interconnect Scaling
TL;DR: A new analytical model is presented to accurately determine crosstalk noise due to on-chip interconnections, which takes into account interconnect line resistance and driver strength, which have not been adequately considered in previous crosStalk models.
Proceedings ArticleDOI
Statistical circuit characterization for deep-submicron CMOS designs
TL;DR: In this article, the authors assess the impact of scaling of CMOS MOSFET gate lengths on the performance sensitivity of deep-sub-micron devices to manufacturing variations.
Journal ArticleDOI
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
Huy Binh Do,Quang Ho Luc,Minh Thien Huu Ha,Sa Hoang Huynh,Chenming Hu,Yueh Chin Lin,Edward Yi Chang +6 more
TL;DR: In this article, a modified method to accurately determine flat band voltage of the In0.53Ga0.47As n-type MOS device is presented, and the effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted $V_{\mathrm {{FB}}}$ values are discussed.
Proceedings ArticleDOI
A dynamic depletion SOI MOSFET model for SPICE
TL;DR: In this paper, a transition between partial and full depletion modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics.
Journal ArticleDOI
Electromigration in two-level bamboo grain structure Al(Cu)/W interconnections
TL;DR: In this article, the mean time to failure was found to be weakly dependent on linewidth from 1.9 μm to 0.7 μm, where the dominant mass transport path is along the edges of the metal line.