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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation
TL;DR: In this article, a non-quasi-static (NQS) MOSFET model is proposed for both large-signal transient and small-Signal ac analysis, which employs a physical relaxation time approach to take care of the finite channel charging time.
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Characterization of spatial intrafield gate CD variability, its impact on circuit performance, and spatial mask-level correction
TL;DR: In this paper, the authors present a comprehensive characterization method applied to the study of the state-of-the-art 18/spl mu/m CMOS process, which reveals a large spatial intrafield component, strongly dependent on the local layout patterns.
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MOSFET degradation due to stressing of thin oxide
TL;DR: In this paper, Fowler-Nordheim tunneling current has been used to create surface states by tunneling electrons flowing to and from the substrate, which can be either positive or negative under the combined influence of the oxide charges and the interface charges.
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Noise characteristics of thin multiplication region GaAs avalanche photodiodes
TL;DR: In this paper, the authors present a systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses and demonstrate that there is a definite "size effect" for multiplication regions less than approximately 0.5 μm.
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Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation
TL;DR: In this article, the dependence of the Mo gate work function on nitrogen implant dose and energy was investigated and it was shown that by implanting nitrogen into Mo/SiO2 /Si stacks, the interfacial Mo work function can be controllably lowered from an initial ~unimplanted! value of ;5 eV.